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Número de pieza

componentes Descripción

Fabricante

BR101

Silicon controlled switch

Philips Electronics 

Philips Semiconductors

Silicon controlled switch

Product specification

BR101

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

NPN transistor

VCBO

VCER

VEBO

IC

ICM

IE

IERM

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

emitter current (DC)

repetitive peak emitter current

PNP transistor

VCBO

VCEO

VEBO

IE

IERM

collector-base voltage

collector-emitter voltage

emitter-base voltage

emitter current (DC)

repetitive peak emitter current

Combined device

Ptot

Tstg

Tj

Tamb

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

RBE = 10 kΩ

open collector; note 1

note 2

tp = 10 µs; δ = 0.01

open emitter

open base

open collector

tp = 10 µs; δ = 0.01

Tamb ≤ 25 °C

−

50

V

−

50

V

−

5

V

−

175

mA

−

175

mA

−

−175

mA

−

−2.5

A

−

−50

V

−

−50

V

−

−50

V

−

175

mA

−

2.5

A

−

275

mW

−65

+150

°C

−

150

°C

−65

+150

°C

Notes

1. It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does

not exceed 50 nC.

2. Provided the IE rating is not exceeded.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient in free air

VALUE

0.45

UNIT

K/mW

1997 Jul 24

3

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