PEMH7 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
PEMH7 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Preliminary specification
PEMH7
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
ICEO
IEBO
hFE
VCEsat
R1
Cc
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
100 nA
collector-emitter cut-off current
VCE = 50 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C −
−
50
µA
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100 nA
DC current gain
VCE = 5 V; IC = 1 mA
200 330 −
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
−
−
100 mV
input resistor
3.3 4.7 6.1 kΩ
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
2.5 pF
103
handbook, halfpage
hFE
(1)
(2)
(3)
MHC074
102
10−1
1
10
102
IC (mA)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC075
102
(1)
(2)
(3)
10
10−1
1
10
102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Oct 22
4
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