DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6591TR Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
L6591TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6591TR Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
L6591
Electrical characteristics
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test condition
IHV, ON ON-state current
VHV > VHvstart,
Vcc > 3 V
VHV > VHvstart, Vcc = 0
IHV, OFF Leakage current (OFF-state)
VCCrestart HV generator restart voltage
VHV = 400 V
(1)
(1) After DIS tripping
Reference voltage
VREF Output voltage
VREF Total variation
IREF Short-circuit current
Sink capability in UVLO
(1) TJ = 25 °C;
IREF = 1 mA
Vcc= 9.2 to 22 V,
IREF = 1 to 5 mA
VREF = 0
Vcc = 6 V;
Isink = 0.5 mA
Current sense comparator
IISEN
tLEB
Input bias current
Leading edge blanking
VISEN = 0
After VHVG low-to-high
transition
td(H-L)
Delay to output
Gain
VISENx Maximum signal
VISENdis Hiccup mode OCP level
(1) VCOMP = 5 V
(1)
PWM control and burst mode control
VCOMPH Maximum level
ICOMP Source current
RCOMP Dynamic resistance
VCOMPBon Burst mode on threshold
Hys Burst mode hysteresis
Dmax Maximum duty cycle
Adaptive UVLO
VCOMPL UVLO shift threshold
Line sensing
ICOMP = 0
VCOMP = 2 V
VCOMP = 2 to 4 V
(1) VCOMP falling
VCOMP rising
VCOMP = 5 V
(1)
Vth
IHys
Vclamp
Threshold voltage
Current hysteresis
Clamp level
Voltage rising or falling
Vcc > 5 V
ILINE = 1 mA
Min.
4.4
12.2
4.9
4.8
10
3.8
0.76
1.4
5.5
210
1.68
46
1.9
1.22
13.2
2.8
Typ.
5
13.2
5
0.2
200
4
0.8
1.5
300
25
1.75
70
2
1.25
14.7
3
Max. Unit
1.6
mA
0.8
40
µA
5.6
V
14.2 V
5.1
V
5.2
V
30 mA
0.5
V
-1
µA
ns
170 ns
4.2 V/V
0.84 V
1.65 V
V
400 µA
k
1.82 V
mV
50
%
2.1
V
1.28 V
16.2 µA
V
Doc ID 14821 Rev 6
9/41

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]