L6591TR Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
L6591TR Datasheet PDF : 41 Pages
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Electrical characteristics
L6591
Table 4.
Symbol
Electrical characteristics (continued)
Parameter
Test condition
Min. Typ. Max. Unit
DIS function
IOTP Input bias current
Vth Disable threshold
VDIS = 0 to Vth
-1
µA
4.275 4.5 4.725 V
Oscillator and deadtime programming
fosc
Vpk
Vvy
Tdead
Oscillation frequency
Oscillator peak voltage
Oscillator valley voltage
Deadtime
(VHVG high-to-low to VLVG
low-to-high transition)
Deadtime (VLVG high-to-low
to VHVG low-to-high
transition)
TJ = 25 °C
Vcc = 9.2 to 22 V
(1)
(1)
CT = 1 nF
CT = 1 nF
170 180 190 kHz
168 180 192 kHz
2.85
3
3.15 V
0.75 0.9 1.05 V
0.42
1.0
µs
0.42
1.0
Soft-start
ISSC Charge current
ISsdis Discharge current
VSsclamp High saturation voltage
VSSDIS Disable level
VSSLAT Latch-off level
PFC_STOP function
TJ = 25 °C, VSS < 1.5 V,
VCOMP = 4 V
14
18
22
µA
TJ = 25 °C, VSS > 1.5 V,
VCOMP = VCOMPH
3.4
4.7
5.6
VSS > 1.5 V
3.4
4.7
5.6
µA
VCOMP = 4 V
2
V
(2) VCOMP = VCOMPH
4.85
5
5.15 V
VCOMP = VCOMPH
6.4
V
Ileak
High level leakage current
VPFC_STOP = Vcc,
VCOMP = 2 V
VL Low saturation level
IPFC_STOP = 2 mA
VCOMP = 1.5 V
Low-side gate driver (voltages referred to GND)
1
µA
0.1
V
VLVGL Output low-voltage
VLVGH
Isourcepk
Isinkpk
Output high-voltage
Peak source current (2)
Peak sink current (2)
Isink = 200 mA
Isource = 5 mA
1.0
V
12.8 13.3
V
-0.3
A
0.8
A
10/41
Doc ID 14821 Rev 6
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