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L6563 Ver la hoja de datos (PDF) - STMicroelectronics

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L6563 Datasheet PDF : 37 Pages
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Electrical characteristics
L6563 - L6563A
Table 4. Electrical characteristics (continued)
( -25°C < TJ < +125°C, VCC = 12V, Co = 1nF between pin GD and GND, CFF =1µF between pin VFF
and GND; unless otherwise specified)
Symbol
Parameter
Test condition
Min Typ Max Unit
VINVCLAMP Internal clamp level
IINV = 1 mA
9
9.5
V
Gv Voltage gain
Open loop
60
80
dB
GB Gain-bandwidth product
1
MHz
ICOMP
Source current
Sink current
VCOMP = 4V, VINV = 2.4 V
VCOMP = 4V, VINV = 2.6 V
-2
-3.5
2.5
4.5
-5 mA
mA
VCOMP
Upper clamp voltage
Lower clamp voltage
ISOURCE = 0.5 mA
ISINK = 0.5 mA (2)
5.7
6.2
6.7
V
2.1 2.25 2.4
V
Current sense comparator
ICS
Input bias current
VCS = 0
tLEB Leading edge blanking
td(H-L) Delay to output
VCSclamp
Current sense reference
clamp
VCOMP = Upper clamp,
VVFF = VMULT =0.5V
Vcsoffset Current sense offset
VMULT = 0, VVFF = 3V
VMULT = 3V, VVFF = 3V
VCSdis
Ic latch-off level (L6563
only)
(2)
-1
µA
100 200 300 ns
120
ns
1.0 1.08 1.16 V
25
mV
5
1.6
1.7
1.8
V
Output overvoltage
IOVP
Dynamic OVP triggering
current
Hys Hysteresis
(4)
Static OVP threshold
(2)
17
20
23
µA
15
µA
2
2.15 2.3
V
Voltage feedforward
VVFF
V
Linear operation range
Dropout
VMULTpk-VVFF
RFF=47 kto GND
0.5
3
V
20 mV
8/37

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