L6562D Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
L6562D Datasheet PDF : 16 Pages
| |||
L6562
the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the
instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the
top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rec-
tifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a
conduction dead-angle of the AC input current in itself - even with an ideal energy transfer by the PFC pre-
regulator - thus making the action of the optimizer circuit little effective.
Figure 23. Typical application circuit (250W, Wide-range mains)
FUSE
5A/250V
Vac
(85V to 265V)
D3 1N5406
T
R4 R5
180 kΩ 180 kΩ
D8
1N4150
C5 12 nF
R14
R1
1.5 MΩ
BRIDGE
+ STBR606
C1
1 µF
400V
-
R2
1.5 MΩ
D2
1N5248B
100 Ω
R50 10 kΩ
R6
68 kΩ
C3 2.2 µF
C23
680 nF
8
5
2
1
R7
10 Ω
3
L6562
7
6
4
D1
NTC
STTH5L06 2.5 Ω
R11
750 kΩ
Vo=400V
Po=250W
R12
750 kΩ
MOS
STP12NM50
7 °C/W heat sink
C6
100 µF
450V
R3
22 kΩ
C2
10nF
C29
22 µF
25V
C4
100 nF
R9
R10
R13
0.33Ω 0.33Ω
9.53 kΩ
1W
1W
-
Boost Inductor Spec: EB0057-C (COILCRAFT)
Figure 24. Demo board (EVAL6562-80W, Wide-range mains): Electrical schematic
FUSE
4A/250V
Vac
(85V to 265V)
T
R4 R5
180 kΩ 180 kΩ
D8
1N4150
C5 12 nF
R14
R1
750 kΩ
BRIDGE
C1
+ DF06M 0.47 µF
400V
R2
750 kΩ
-
D2
1N5248B
100 Ω
R50 12 kΩ
R6
68 kΩ
C3 680 nF
C23
330 nF
8
5
2
1
3
L6562
7
6
4
R7
33 Ω
D1
NTC
STTH1L06 2.5 Ω
R11
750 kΩ
Vo=400V
Po=80W
R12
750 kΩ
MOS
STP8NM50
C6
47 µF
450V
R3
10 kΩ
C2
10nF
C29
22 µF
25V
C4
100 nF
R9
R10
R13
0.82Ω 0.82Ω
9.53 kΩ
0.6 W 0.6 W
-
Boost Inductor Spec (ITACOIL E2543/E)
E25x13x7 core, 3C85 ferrite
1.5 mm gap for 0.7 mH primary inductance
Primary: 105 turns 20x0.1 mm
Secondary: 11 turns 0.1 mm
10/16
Share Link: 