L6360 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
L6360 Datasheet PDF : 63 Pages
| |||
L6360
Electrical characteristics
Symbol
RONL
RONCQH
RONCQL
tdINC/Q
tENC/Q
trPP
tfPP
trHS
tfHS
trLS
tfLS
tENL
trL+
tfL+
tdC/Qi
tdI/Q
tdcoq
trcoq
tdbq
tdbl
Parameter
Test conditions
Min. Typ. Max. Unit
L+ high-side ON-state resistance
C/QO high-side ON-state resistance
C/QO low-side ON-state resistance
INC/Q to C/QO propagation delay time
ENC/Q to C/QO propagation delay time
C/Q rise time in push-pull configuration
IOUT = 0.2 A at TJ = 25 °C
1
Ω
IOUT = 0.2 A at TJ = 125 °C
2Ω
IOUT = 0.2 A at TJ = 25 °C
1
Ω
IOUT = 0.2 A at TJ = 125 °C
2Ω
IOUT = 0.2 A at TJ = 25 °C
0.6
Ω
IOUT = 0.2 A at TJ = 125 °C
1.2 Ω
Push-pull (CQO rising edge)
140
ns
Push-pull (CQO falling edge)
160
ns
Push-pull (CQO rising edge)
110
ns
Push-pull (CQO falling edge)
225
ns
10% to 90%
250
860 ns
C/Q fall time in push-pull configuration
10% to 90%
290
860 ns
C/Q rise time in high-side configuration
410
ns
C/Q fall time in high-side configuration
700
ns
C/Q rise time in low-side configuration
750
ns
C/Q fall time in low-side configuration
530
ns
ENL to L+ propagation delay time
1
μs
L+ rise time
3
μs
L+ fall time
25
μs
C/QI to OUTC/Q (falling) propagation delay time
C/QI to OUTC/Q (rising) propagation delay time
I/Q to OUTI/Q (falling) propagation delay time
I/Q to OUTI/Q (rising) propagation delay time
40
ns
100
ns
40
ns
100
ns
100
μs
C/QO low- and high-side cut-off current delay time
Programmable
150
μs
200
μs
250
μs
C/QO restart delay time
Programmable
255 × tdcoq
μs
Latched
C/QI debounce time
Programmable
0
5
μs
20
100
0
I/Q debounce time
Programmable
5
μs
20
100
DS8900 - Rev 7
page 8/63
Share Link: 