DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6230 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
L6230 Datasheet PDF : 24 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
L6230
5
Circuit description
Circuit description
5.1
Power stages and charge pump
The L6230 integrates a three-phase bridge, which consists of 6 power MOSFETs connected
as shown on the block diagram (see Figure 1), each power MOS has an
RDS(ON) = 0.73 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Cross
conduction protection is implemented by using a dead time (tDT = 1 µs typical value) set by
internal timing circuit between the turn off and turn on of two power MOSFETs in one leg of
a bridge.
Pins VSA and VSB must be connected together to the supply voltage (VS).
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 6. The oscillator output (pin VCP) is a square wave at 600 kHz (typically)
with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are
shown in Table 7.
Table 7.
Charge pump external component values
Component
CBOOT
CP
D1
D2
Value
220 nF
10 nF
1N4148
1N4148
Figure 6. Charge pump circuit
VS
D1
D2
CBOOT
CP
VCP
VBOOT
VSA VSB
Doc ID 18094 Rev 2
11/24

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]