L6226Q Ver la hoja de datos (PDF) - STMicroelectronics

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L6226Q

DMOS dual full bridge driver

STMicroelectronics 

L6226Q

6

Paralleled operation

Paralleled operation

The outputs of the L6226Q can be paralleled to increase the output current capability or

reduce the power dissipation in the device at a given current level. It must be noted,

however, that the internal wire bond connections from the die to the power or sense pins of

the package must carry current in both of the associated half bridges. When the two halves

of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak

current rating is not increased since the total current must still flow through one bond wire on

the power supply or sense pin. In addition the over current detection senses the sum of the

current in the upper devices of each bridge (A or B) so connecting the two halves of one

bridge in parallel does not increase the over current detection threshold.

For most applications the recommended configuration is half bridge 1 of bridge A paralleled

with the half bridge 1 of the bridge B, and the same for the half bridges 2 as shown in

Figure 15. The current in the two devices connected in parallel will share very well since the

RDS(on) of the devices on the same die is well matched.

When connected in this configuration the over current detection circuit, which senses the

current in each bridge (A and B), will sense the current in upper devices connected in

parallel independently and the sense circuit with the lowest threshold will trip first. With the

enables connected in parallel, the first detection of an over current in either upper DMOS

device will turn of both bridges. Assuming that the two DMOS devices share the current

equally, the resulting over current detection threshold will be twice the minimum threshold

set by the resistors RCLA or RCLB in Figure 15. It is recommended to use RCLA = RCLB.

In this configuration the resulting bridge has the following characteristics.

● Equivalent device: full bridge

● RDS(on) 0.37 Ω typ. value @ TJ = 25 °C

● 2.8 A max RMS load current

● 5.6 A max OCD threshold

Doc ID 14335 Rev 5

19/29

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