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BUZ60 Datasheet PDF : 5 Pages
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BUZ60
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ60
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400
400
5.5
22
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
400
VGS(TH) VGS = VDS, ID = 1mA (Figure 9)
2.1
IDSS TJ = 25oC, VDS = 400V, VGS = 0V
-
TJ = 125oC, VDS = 400V, VGS = 0V
-
IGSS VGS = 20V, VDS = 0V
-
rDS(ON) ID = 2.5A, VGS = 10V (Figure 8)
-
gfs
VDS = 25V, ID = 2.5A (Figure 11)
1.7
td(ON) VCC = 30V, ID ≈ 2.7A, VGS = 10V, RGS = 50Ω,
-
tr
RL = 10Ω. (Figures 14, 15)
-
td(OFF)
-
tf
-
CISS VDS = 25V, VGS = 0V, f = 1MHz
-
(Figure 10)
COSS
-
CRSS
-
RθJC
RθJA
-
3
20
100
10
0.9
2.5
30
40
110
50
1.5
120
35
≤1.67
≤75
-
4
250
1000
100
1
-
45
60
140
65
2
180
60
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
pF
pF
pF
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Continuous Source to Drain Current
ISD
TC = 25oC
-
-
5.5
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
-
-
22
VSD
TJ = 25oC, ISD = 11A, VGS = 0V
-
1.15
1.6
trr
TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs,
-
1000
-
QRR
VR = 100V
-
5
-
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2
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