KSC5386 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

KSC5386

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

KSC5386

DESCRIPTION

·High Collector-Base Voltage-

: VCBO = 1500V(Min)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for use in high definition color display

horizontal deflection output application.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

16

A

50

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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