KSC5305 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

KSC5305

NPN Silicon Transistor

Fairchild Semiconductor 

KSC5305D

High Voltage High Speed Power Switch

Application

Equivalent Circuit

C

• Built-in Free-wheeling Diode makes efficient anti saturation operation

• Suitable for half bridge light ballast Applications

• No need to interest an hFE value because of low variable storage-time B

spread even though corner spirit product

• Low base drive requirement

1

TO-220

E

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

IB

IBP

PC

TJ

TSTG

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

*Base Current (Pulse)

Power Dissipation(TC=25°C)

Junction Temperature

Storage Temperature

Thermal Characteristics TC=25°C unless otherwise noted

Symbol

Characteristics

Rθjc

Thermal Resistance

Junction to Case

Rθja

Junction to Ambient

Value

800

400

12

5

10

2

4

75

150

- 65 ~ 150

Units

V

V

V

A

A

A

A

W

°C

°C

Rating

1.65

62.5

Unit

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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