KSC5302D Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
KSC5302D Datasheet PDF : 6 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob
Output Capacitance
tON
Turn On time
tSTG
Storage Time
tF
Fall Time
tSTG
Storage Time
tF
Fall Time
VF
Diode Forward Voltage
trr
*Reverse Recovery Time
(di/dt = 10A/µs)
*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
VCB=500V, IE=0
VEB = 9V, IC = 0
VCE=1V, IC=0.4A
VCE=1V, IC=1A
IC=0.4A, IB=0.04A
IC=1A, IB=0.2A
IC=0.4A, IB=0.04A
IC=1A, IB=0.2A
VCB = 10V, f=1MHz
VCC=300V, IC =1A
IB1 = 0.2A, IB2=-0.5A,
RL = 300Ω
VCC=15V, VZ=300V
IC = 0.8A, IB1 = 0.16A
IB2 = -0.16A , L = 200µH
IF = 0.4A
IF = 1A
IF = 0.2A
IF = 0.4A
IF = 1A
Min.
800
400
12
-
-
20
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
-
-
0.4
0.5
0.9
1.0
75
150
2
0.2
2.35
150
Units
V
V
V
µA
µA
V
V
V
V
pF
ns
µs
µs
µs
ns
-
1.2
V
-
1.5
V
800
-
ns
1
-
µs
1.4
-
µs
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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