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KSC1009

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC1009

High Voltage Amplifier

• High Collector-Base Voltage : VCBO=160V

• Collector Current : IC=700mA

• Collector Power Dissipation : PC=800mW

• Complement to KSA709

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

160

140

8

700

800

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

VBE (sat)

fT

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

IC=100µA, IE=0

IC=10mA, IB=0

IE=10µA, IC=0

VCB=60V, IE=0

VEB=5V, IC=0

VCE=2V, IC=50mA

IC=200mA, IB=20mA

IC=200mA, IB=20mA

VCE=10V, IC=50mA

VCB=10V, IE=0, f=1MHz

Min.

160

140

8

40

30

Typ.

0.2

0.86

50

8

Max.

0.1

0.1

400

0.7

1.0

Units

V

V

V

µA

µA

V

V

MHz

pF

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

G

200 ~ 400

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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