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KSC1008 Datasheet PDF : 5 Pages
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KSC1008
NPN Epitacial Silicon Transistor
September 2006
tm
Features
• Low frequency amplifier medium speed switching.
• High Collector-Base Voltage : VCBO=80V.
• Collector Current : IC=700mA
• Collector Power Dissipation : PC=800mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)
• Complement to KSA708
TO-92
1 23
KSC1008 : 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
8
IC
Collector current
700
PC
Collector Power Dissipation
800
TJ
Junction Temperature
+150
Tstg
Storage Temperature
-55 ~ +150
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics * Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
VCE (sat)
Collector-Emitter Saturation Voltage
VBE (sat)
Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
Min.
80
60
8
40
30
Typ.
0.2
0.86
50
8
Max.
0.1
0.1
400
0.4
1.1
Units
V
V
V
µA
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2006 Fairchild Semiconductor Corporation
1
KSC1008 Rev. B
www.fairchildsemi.com
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