1N120B Ver la hoja de datos (PDF) - Fairchild Semiconductor
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1N120B Datasheet PDF : 8 Pages
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HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves (Unless Otherwise Specified) (Continued)
300 TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V TC VGE
200
TC =
75oC, VGE = 15V
IDEAL DIODE
7755ooCC
110oC
15V
13V
15V
100
110oC 13V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
10 PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 2.1oC/W, SEE NOTES
5
0.5
1.0
2.0
3.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
20
VCE = 840V, RG = 82Ω, TJ = 125oC
18
18
tSC
16
16
14
ISC
14
12
12
10
13
13.5
14
14.5
VGE, GATE TO EMITTER VOLTAGE (V)
10
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
6
5
TC = 25oC
4
TC = -55oC
3
TC = 150oC
2
1
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6
5
4
3
TC = -55oC
TC = 25oC
TC = 150oC
2
1
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
RG = 82Ω, L = 4mH, VCE = 960V
1000
800
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
600
400
200
TJ = 25oC, VGE = 13V
TJ = 25oC, VGE = 15V
0
0.5
1
1.5
2
2.5
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
250
RG = 82Ω, L = 4mH, VCE = 960V
200 TJ = 150oC, VGE = 13V OR 15V
150
100
TJ = 25oC, VGE = 13V OR 15V
50
0
0.5
1
1.5
2
2.5
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTD1N120BNS, HGTP1N120BN Rev. B
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