KM718V089 Ver la hoja de datos (PDF) - Samsung
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KM718V089 Datasheet PDF : 20 Pages
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KM736V989
KM718V089
512Kx36 & 1Mx18 Synchronous SRAM
PASS-THROUGH TRUTH TABLE
PREVIOUS CYCLE
OPERATION
WRITE
PRESENT CYCLE
OPERATION
CS1 WRITE OE
NEXT CYCLE
Write Cycle, All bytes
Address=An-1, Data=Dn-1
Initiate Read Cycle
All L Address=An
Data=Qn-1 for all bytes
L
H
L
Read Cycle
Data=Qn
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=Qn-1 for all bytes
H
H
L
No carryover from
previous cycle
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=High-Z
H
H
H
No carryover from
previous cycle
Write Cycle, One byte
Address=An-1, Data=Dn-1
Initiate Read Cycle
One L Address=An
Data=Qn-1 for one byte
L
H
L
Read Cycle
Data=Qn
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
No new cycle
Data=Qn-1 for one byte
H
H
L
No carryover from
previous cycle
Note : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 4.6
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.6
W
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
TSTG
TOPR
TBIAS
-65 to 150
°C
0 to 70
°C
-10 to 85
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
3.135
3.3
Ground
VSS
0
0
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDITION
MIN
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
3.465
3.465
0
MAX
3.465
2.9
0
MAX
7
9
UNIT
V
V
V
UNIT
V
V
V
UNIT
pF
pF
-9-
December 1999
Rev 1.0
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