KI4500BDY Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Fabricante

KI4500BDY

Complementary MOSFET Half-Bridge (N- and P-Channel)

KEXIN Industrial 

SMD Type

TransistIoCrs

KI4500BDY

Electrical Characteristics Ta = 25

Parameter

Gate Threshold Voltage

Symbol

Testconditons

VDS = VGS, ID = 250 A

VGS( th)

VDS = VGS, ID = -250 A

Gate Body Leakage

IGSS VDS = 0 V VGS = 12 V

Zero Gate Voltage Drain Current

On State Drain Currenta

Drain Source On State Resistance*

Forward Transconductance*

Diode Forward Voltage*

Total Gate Charge

IDSS

ID(on)

rDS(on)

gfs

VSD

Qg

VDS = 20V, VGS = 0 V

VDS = -16V, VGS = 0 V

VDS = 20 V, VGS = 0 V, TJ = 55

VDS = -16V, VGS = 0 V, TJ = 55

VDS =5 V, VGS = 4.5 V

VDS =-5 V, VGS = -4.5 V

VGS = 4.5 V, ID = 9.1A

VGS = -4.5 V, ID = -5.3A

VGS = 2.5 V, ID = 3.3A

VGS = -2.5 V, ID = -1A

VDS = 15 V, ID = 9.1A

VDS = -15 V, ID = -5.3A

IS = 2.1A, VGS = 0 V

IS = -2.1A, VGS = 0 V

N-Channel

VDS = 10 V, VGS = 4.5V, ID = 9.1A

Gate Source Charge

Gate Drain Charge

Qgs

P-Channel

VDS = -10 V, VGS = -4.5 V, ID = -5.3A

Qgd

Turn On Time

Rise Time

td(on)

tr

N Channel

VDD = 10 V, RL = 10

ID= 1A, VGEN = 10V, Rg = 6

Turn Off Delay Time

Fall Time

td( off)

tf

P-Channel

VDD = -10 V, RL = 10

ID= -1 A, VGEN = -4.5 V, Rg = 6

Source-Drain Reverse Recovery

Time

IF = 2.1A, di/dt = 100 A/ s

trr

IF =- 2.1 A, di/dt = 100 A/ s

* Pulse test; pulse width 300 s, duty cycle 2%.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

Min Typ Max Unit

0.6

1.5

V

-0.6

-1.5

100

100

nA

1

-1

5

A

-5

30

A

-20

0.016 0.020

0.048 0.060

0.024 0.030

0.082 0.100

29

mS

11

0.8 1.2

V

?0.8 -1.2

11 17

6.0 9

2.5

nC

1.3

3.2

1.6

35 50

20 30

50 80

35 60

31 50

ns

55 85

15 30

35 60

30 60

25 50

2 www.kexin.com.cn

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