DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

KBPC1506FP Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza
componentes Descripción
Fabricante
KBPC1506FP
Diotec
Diotec Semiconductor Germany  Diotec
KBPC1506FP Datasheet PDF : 2 Pages
1 2
KBPC10 00...16 FP/WP KBPC15 00...16 FP/WP KBPC25 00...16 FP/WP
Maximum ratings
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
Grenzwerte
60 A 1)
270/300 A
375 A2s
-50...+150°C
-50...+150°C
Characteristics
Max. current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm2
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
TA = 50°C
Tj = 25°C
Tj = 25°C
R-load
IFAV
C-load
IFAV
IF = 12.5 A VF
VR = VRRM IR
VISO
RthC
10-32 UNF
M5
Kennwerte
25 A
20 A
< 1.2 V 2)
< 25 µA
> 2500 V
< 2.0 K/W
18 ± 10% lb.in.
2 ± 10% Nm
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50
100
150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
102
[A]
Tj = 125°C
10
Tj = 25°C
1
10-1
IF
10-2
270a-(12a-1.2v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Valid, if the temperature of the case is kept to TC = 120°C – Gültig, wenn die Gehäusetemperatur auf TC = 120°C gehalten wird
2 Valid per diode – Gültig pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]