K7N801849B Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Fabricante

K7N801849B

256Kx36 & 512Kx18 Pipelined NtRAM

Samsung 

K7N803649B

K7N801849B

256Kx36 & 512Kx18 Pipelined NtRAMTM

DC ELECTRICAL CHARACTERISTICS(VDD=2.5V ±5%, TA=0°C to +70°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Input Leakage Current(except ZZ)

Output Leakage Current

Operating Current

Standby Current

IIL VDD=Max ; VIN=VSS to VDD

-2

IOL Output Disabled,

-2

Device Selected , IOUT=0mA

ICC

ZZ≤VIL , Cycle Time ≥ tCYC Min

-25

-

Device deselected, IOUT=0mA,

ISB ZZ≤VIL, f=Max,

All Inputs≤0.2V or ≥ VDD-0.2V

-25

-

Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,

ISB1

-

All Inputs=fixed (VDD-0.2V or 0.2V)

Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,

ISB2 f=Max, All Inputs≤VIL or ≥VIH

-

Output Low Voltage

Output High Voltage

Input Low Voltage

Input High Voltage

VOL

VOH

VIL

VIH

IOL=1.0mA

IOH=-1.0mA

-

2.0

-0.3*

1.7

Notes : 1. The above parameters are also guaranteed at industrial temperature range.

2. Reference AC Operating Conditions and Characteristics for input and timing.

3. Data states are all zero.

4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V

MAX

+2

+2

440

160

100

60

0.4

-

0.7

VDD+0.3**

UNIT NOTES

µA

µA

mA 1,2

mA

mA

mA

V

V

V

V

3

Overshoot Timing

VDDQ+1.0V

VDDQ+0.5V

VDDQ

20% tCYC(MIN)

VIL

Undershoot Timing

VIH

VSS

VSS-0.5V

VSS-1.0V

20% tCYC(MIN)

TEST CONDITIONS

(TA=0 to 70°C, VDD=2.5V ±5%, unless otherwise specified)

PARAMETER

Input Pulse Level

Input Rise and Fall Time(Measured at 20% to 80%)

Input and Output Timing Reference Levels

Output Load

* The above parameters are also guaranteed at industrial temperature range.

VALUE

0 to 2.5V

1.0V/ns

1.25V

See Fig. 1

Rev. 5.0 April 2006

- 11 -

Share Link: