K7N801845M Ver la hoja de datos (PDF) - Samsung
Número de pieza
componentes Descripción
Fabricante
K7N801845M Datasheet PDF : 18 Pages
| |||
K7N803645M
K7N801845M
256Kx36 & 512Kx18 Pipelined NtRAMTM
ASYNCHRONOUS TRUTH TABLE
Operation
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 3.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to 3.6
V
Power Dissipation
PD
1.4
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
VDD
VDDQ
VSS
MIN
2.375
2.375
0
*Note : VDD and VDDQ must be supplied with identical vlotage levels.
Typ.
2.5
2.5
0
MAX
2.625
2.625
0
UNIT
V
V
V
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDI-
MIN
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
6
8
UNIT
pF
pF
-9-
November 1999
Rev 3.0
Share Link: 