K6X4008T1F Ver la hoja de datos (PDF) - Samsung
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K6X4008T1F Datasheet PDF : 9 Pages
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K6X4008T1F Family
CMOS SRAM
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 512K×8
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 2V(Min)
• Three State Outputs
• Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0813.4F
GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
various operating temperature range and have various pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family
K6X4008T1F-B
K6X4008T1F-F
Operating Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Vcc
Range
2.7~3.6V
Speed
551)/702)/85ns
Power Dissipation
Standby Operating
(ISB1, Max) (ICC2, Max)
10µA
10µA
25mA
K6X4008T1F-Q Automotive(-40~125°C)
702)/85ns
20µA
PKG Type
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F/R
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
PIN DESCRIPTION
A18 1
32
A16 2
31
A14 3
30
A12 4
29
A7 5
28
A6 6
27
A5 7
26
A4
8
32-SOP
32-TSOP2
25
A3 9 (Forward) 24
A2 10
23
A1 11
22
A0 12
21
I/O1 13
20
I/O2 14
19
I/O3 15
18
VSS 16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC 32
1 A18
A15 31
2 A16
A17 30
3 A14
WE 29
4 A12
A13 28
5 A7
A8 27
6 A6
A9 26 32-TSOP2 7 A5
A11 25 (Reverse) 8 A4
OE 24
9 A3
A10 23
10 A2
CS 22
11 A1
I/O8 21
12 A0
I/O7 20
13 I/O1
I/O6 19
14 I/O2
I/O5 18
15 I/O3
I/O4 17
16 VSS
A11 1
A9 2
A8 3
A13 4
WE 5
A17 6
A15 7
VCC 8
A18 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
32-STSOP1
(Forward)
32 OE
31 A10
30 CS
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
Name Function
Name Function
A0~A18 Address Inputs
Vcc Power
WE Write Enable Input
Vss Ground
CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs
OE Output Enable Input
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
I/O1
Data
I/O Circuit
I/O8
cont
Column select
Data
cont
Column Addresses
CS
Control
WE logic
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2003
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