K6T4008U1C Ver la hoja de datos (PDF) - Samsung
Número de pieza
componentes Descripción
Fabricante
K6T4008U1C Datasheet PDF : 10 Pages
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K6T4008V1C, K6T4008U1C Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Product
K6T4008V1C Family
K6T4008U1C Family
All Family
K6T4008V1C, K6T4008U1C Family
K6T4008V1C, K6T4008U1C Family
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+2.0V in case of pulse width ≤ 30ns
3. Undershoot : -2.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
3.0
2.7
0
2.2
-0.33)
CMOS SRAM
Typ
Max
Unit
3.3
3.6
V
3.0
3.3
0
0
V
-
Vcc+0.32)
V
-
0.6
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Symbol
Test Condition
Min
Input capacitance
CIN
VIN=0V
-
Input/Output capacitance
CIO
VIO=0V
-
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
ICC2
Cycle time=1µs, 100% duty, IIO=0mA CS≤0.2V,VIN≤0.2V or VIN≥Vcc-0.2V
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(TTL)
ISB CS=VIH, Other inputs = VIL or VIH
Standby Current (CMOS)
1. Industrial product = 20µA
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc
Max
Unit
8
pF
10
pF
Min Typ Max Unit
-1
-
1 µA
-1
-
1 µA
-
-
4 mA
-
-
4 mA
-
- 30 mA
-
- 0.4 V
2.2 -
-V
-
- 0.3 mA
-
- 151) µA
4
Revision 1.0
January 1999
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