K6T4008C1C Ver la hoja de datos (PDF) - Samsung

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componentes Descripción

Fabricante

K6T4008C1C

512Kx8 bit Low Power CMOS Static RAM

Samsung 

K6T4008C1C Family

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

Address

Data Out

tRC

tAA

tOH

Previous Data Valid

CMOS SRAM

Data Valid

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Address

CS

tRC

tAA

tCO1

tOE

OE

Data out

High-Z

tOLZ

tLZ

tOH

tHZ

Data Valid

tOHZ

NOTES (READ CYCLE)

1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

6

Revision 1.0

April 1999

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