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K6T4008C1C Ver la hoja de datos (PDF) - Samsung

Número de pieza
componentes Descripción
Fabricante
K6T4008C1C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
K6T4008C1C Family
CMOS SRAM
512Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology: TFT
Organization: 512Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
GENERAL DESCRIPTION
The K6T4008C1C families are fabricated by SAMSUNGs
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up oper-
ation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6T4008C1C-L
K6T4008C1C-B
Commercial (0~70°C)
K6T4008C1C-P
K6T4008C1C-F
Inderstrial (-40~85°C)
1. The parameter is measured with 50pF test load.
4.5~5.5V
Speed
551)/70ns
Power Dissipation
Standby
(ISB1, Max)
Operating
(ICC2, Max)
80µA
20µA
100µA
55mA
30µA
PKG Type
32-DIP,32-SOP
32-TSOP2-F/R
32-SOP
32-TSOP2-F/R
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
32
2
31
3
30
4
29
5
28
6
27
32-DIP
7
26
32-SOP
8 32-TSOP2 25
9 (Forward) 24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC 32
1
A15 31
2
A17 30
3
WE
29
4
A13 28
5
A8 27
6
A9 26 32-TSOP2 7
A11 25 (Reverse) 8
OE
24
9
A10 23
10
CS
22
11
I/O8 21
12
I/O7 20
13
I/O6 19
14
I/O5 18
15
I/O4 17
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
Clk gen.
Precharge circuit.
Row
select
Memory array
1024 rows
512×8 columns
I/O1
Data
I/O Circuit
I/O8
cont
Column select
Data
cont
Pin Name
WE
CS
OE
A0~A18
I/O1~I/O8
Vcc
Vss
Function
Write Enable Input
Chip Select Input
Output Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
CS
Control
WE
logic
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
April 1999

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