K6R1016C1C Ver la hoja de datos (PDF) - Samsung
Número de pieza
componentes Descripción
Fabricante
K6R1016C1C Datasheet PDF : 11 Pages
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K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
Test Conditions
Min
ILI
VIN=VSS to VCC
-2
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
ICC
Min. Cycle, 100% Duty
10ns
-
CS=VIL, VIN = VIH or VIL, IOUT=0mA
12ns
-
15ns
-
ISB
Min. Cycle, CS=VIH
-
ISB1
f=0MHz, CS ≥VCC-0.2V,
VIN≥VCC-0.2V or VIN ≤0.2V
Normal
-
L-Ver.
-
VOL
IOL=8mA
-
VOH
IOH=-4mA
2.4
VOH1** IOH1=-0.1mA
-
Max
2
2
105
95
93
30
5
0.5
0.4
-
3.95
Unit
µA
µA
mA
mA
mA
V
V
V
* The above parameters are also guaranteed at industrial temperature range.
** VCC=5.0V±5%, Temp.=25°C
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
MIN
VI/O=0V
-
VIN=0V
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
-4-
* Including Scope and Jig Capacitance
Revision 4.0
September 2001
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