DS10004Z-2/TR Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS10004Z-2/TR

5-Tap High-Speed Silicon Delay Line

Dallas Semiconductor -> Maxim Integrated 

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any Pin Relative to Ground

Operating Temperature

Storage Temperature

Soldering Temperature

Short Circuit Output Current

-1.0V to +7.0V

0°C to 70°C

-55°C to +125°C

260°C for 10 seconds

50 mA for 1 second

DS1004

* This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operation sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods of time may affect reliability.

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYM

TEST

CONDITION

Supply Voltage

Active Current

VCC

ICC

VCC=5.25V

Period=1 µs

High Level Input

VIH

Voltage

Low Level Input

VIL

Voltage

Input Leakage

II

High Level Output IOH

Current

Low Level Output IOL

Current

0.0V ≤ VI ≤ VCC

VCC=4.75V

VOH=4V

VCC=4.75V

VOL=0.5V

MIN

4.75

2.2

-0.5

-1.0

12

(0°C to 70°C; VCC = 5.0V ± 5%)

TYP MAX UNITS NOTES

5.00

5.25

V

1

35

75

mA

VCC + 0.5

V

1

0.8

V

1

1.0

µA

-1.0

mA

mA

AC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

Period

Input Pulse Width

Input to Tap 1

Output Delay

Tap-to-Tap Delays

Output Rise or

Fall Time

Power-up Time

tPERIOD

tWI

tPLH,

tPHL

tPLH

tOR,

tOF

tPU

4 (tWI)

40% of Tap 5 tPLH

(TA = 25°C; VCC = 5V ± 5%)

TYP MAX UNITS NOTES

ns

3

ns

3

Table 1

ns

2

Table 1

ns

2

2.0

2.5

ns

100

ms

CAPACITANCE

PARAMETER

Input Capacitance

SYMBOL

CIN

MIN

(TA = 25°C)

TYP MAX UNITS NOTES

10

pF

4 of 6

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