JC559 Ver la hoja de datos (PDF) - Philips Electronics
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JC559 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
JC559
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
DC current gain
IC = −2 mA; VCE = −5 V
125
see Fig 2
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1
−
IC = −100 mA; IB = −5 mA; note 1
−
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1
−
base-emitter voltage
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V; note 2
IC = −10 mA; VCE = −5 V; note 2
−
−600
−
collector capacitance
emitter capacitance
transition frequency
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
f = 10 Hz to 15.7 kHz
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−1
−
−
−
−60
−180
−750
−930
−650
−
4
12
−
−
−
−15
−4
−100
800
−300
−650
−
−
−750
−820
−
−
−
4
4
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 27
3
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