JC550B Ver la hoja de datos (PDF) - Philips Electronics
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JC550B Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
JC549; JC550
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
JC549B; JC550B
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V;
see Figs 2 and 3
JC549C; JC550C
DC current gain
JC549; JC550
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
JC549B; JC550B
JC549C; JC550C
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN. TYP. MAX. UNIT
−
−
15 nA
−
−
5
µA
−
−
100 nA
−
150 −
−
270 −
200 −
800
200 290 450
420 520 800
−
90 250 mV
−
200 600 mV
−
700 −
mV
−
900 −
mV
580 660 700 mV
−
−
770 mV
−
2.5 −
pF
−
11.5 −
pF
100 −
−
MHz
−
−
4
dB
−
−
4
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1997 Jul 08
4
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