IXTQ150N15P Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTQ150N15P Datasheet PDF : 5 Pages
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PolarHTTM
Power MOSFET
IXTK 150N15P
IXTQ 150N15P
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
150 V
150 A
13 m Ω
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
V
150
V
VGS
VGSM
Continuous
Transient
±20
V
±30
V
ID25
ID(RMS)
I
DM
IAR
EAR
EAS
TC = 25° C
External lead current limit
T
C
=
25°
C,
pulse
width
limited
by
T
JM
TC = 25° C
TC = 25° C
TC = 25° C
150
A
75
A
340
A
60
A
80
mJ
2.5
J
dv/dt
PD
TJ
TJM
Tstg
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤175° C, RG = 4 Ω
TC = 25° C
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
T
L
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
TO-3P
Symbol
TO-264
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
10
g
Characteristic Values
Min. Typ. Max.
150
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175° C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
13 m Ω
G
D
S
TO-3P (IXTQ)
D (TAB)
G
DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99299E(03/06)
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