IXSN55N120AU1 Ver la hoja de datos (PDF) - IXYS CORPORATION

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IXSN55N120AU1

High Voltage IGBT with Diode Short Circuit SOA Capability

IXYS CORPORATION 

IXSN 55N120AU1

Symbol

gfs

IC(on)

Cies

C

oes

Cres

Qg

Qge

Q

gc

td(on)

tri

td(off)

t

fi

Eoff

td(on)

t

ri

td(off)

t

fi

tc

Eon

Eoff

RthJC

RthCK

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IC = IC90; VCE = 10 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

VCE = 10 V, VGE = 15 V

V = 25 V, V = 0 V, f = 1 MHz

CE

GE

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Inductive

load,

T

J

=

25°C

IC = IC90, VGE = 15 V,

VCE = 0.8 • VCES, RG = 2.7 W

Remarks: Switching times may increase

for VCE (Clamp) > 0.8 • VCES, higher TJ or

increased RG

Inductive load, TJ = 125°C

IC = IC90, VGE = 15 V,

V

CE

=

0.8

•

V,

CES

R

G

=

2.7

W

Remarks: Switching times may increase

for VCE (Clamp) > 0.8 • VCES, higher TJ or

increased RG

32 45

S

340

A

8000

pF

590

pF

90

pF

300

nC

80

nC

140

nC

140

ns

220

ns

400

ns

700 1000 ns

18

mJ

140

ns

250

ns

600

ns

900

ns

950

ns

6

mJ

25

mJ

0.25 K/W

0.05

K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

T

U

Millimeter

Min. Max.

31.50 31.88

7.80 8.20

4.09 4.29

4.09 4.29

4.09 4.29

14.91 15.11

30.12 30.30

38.00 38.23

11.68 12.22

8.92 9.60

0.76 0.84

12.60 12.85

25.15 25.42

1.98 2.13

4.95 5.97

26.54 26.90

3.94 4.42

4.72 4.85

24.59 25.07

-0.05 0.1

Inches

Min. Max.

1.240 1.255

0.307 0.323

0.161 0.169

0.161 0.169

0.161 0.169

0.587 0.595

1.186 1.193

1.496 1.505

0.460 0.481

0.351 0.378

0.030 0.033

0.496 0.506

0.990 1.001

0.078 0.084

0.195 0.235

1.045 1.059

0.155 0.174

0.186 0.191

0.968 0.987

-0.002 0.004

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VF

IRM

t

rr

RthJC

IF = IC90, VGE = 0 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

2.55 V

IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms

32

V = 540 V

R

T

J

=

100°C

300

IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C 40

36 A

ns

60 ns

0.71 K/W

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2-2

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