IXGH28N120B Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH28N120B Datasheet PDF : 5 Pages
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Fig. 7. Trans conductance
35
TJ = -40ºC
30
25ºC
25
125ºC
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100
I C - Amperes
Fig. 9. Dependence of Turn-Off
Energy Los s on IC
10
9
RG = 5Ω
TJ = 125ºC
8
VGE = 15V
7
VCE = 960V
6
5
4
3
TJ = 25ºC
2
1
0
10 15 20 25 30 35 40 45 50 55 60
I C - Amperes
1400
1200
1000
800
Fig. 11. Dependence of Turn-off
Sw itching Tim e on RG
td(off)
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 960V
600 IC = 14A
400
IC = 28A
IC = 56A
200
0
10 20 30 40 50 60 70 80 90 100
R G - Ohms
IXGH 28N120B
IXGT 28N120B
Fig. 8. Dependence of Turn-off
Ene rgy Loss on RG
18
16
TJ = 125ºC
14
VGE = 15V
12
VCE = 960V
IC = 56A
10
8
IC = 28A
6
4
IC = 14A
2
0
0 10 20 30 40 50 60 70 80 90 100
R G - Ohms
Fig. 10. De pende nce of Turn-off
Ene rgy Loss on Tem pe rature
11
10
RG = 5Ω
9
VGE = 15V
IC = 56A
8
VCE = 960V
7
6
5
IC = 28A
4
3
2
1
IC = 14A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 12. Depe ndence of Turn-off
Sw itching Tim e on IC
450
400
td(off)
350
tfi - - - - - -
300
TJ = 125ºC
RG = 5Ω
VGE = 15V
250
VCE = 960V
200
TJ = 25ºC
150
100
10 15 20 25 30 35 40 45 50 55 60
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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