IXGH28N120B Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXGH28N120B Datasheet PDF : 5 Pages
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High Voltage IGBT
IXGH 28N120B
IXGT 28N120B
VCES = 1200 V
IC25 = 50 A
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
1200
V
VGES
VGEM
Continuous
Transient
±20
V
±30
V
IC25
TC = 25°C
IC110
TC = 110°C
ICM
TC = 25°C, 1 ms
50
A
28
A
150
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 120
A
@ 0.8 VCES
PC
TC = 25°C
250
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
Md
Weight
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA , VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = VCES, VGE= 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
1200
2.5
V
5V
25 µA
VCE = 0 V, VGE = ±20 V
IC = 28A, VGE = 15 V
TJ = 125°C
±100 nA
2.8 3.5 V
2.75
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98987E(04/04)
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