IXGH20N120B Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH20N120B Datasheet PDF : 5 Pages
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Fig. 7. Dependence of Eoff on RG
14
12
10
TJ = 125ºC
8
VGE = 15V
VC E = 960V
6
I C = 40A
I C = 20A
4
2
I C= 10A
0
0
10
20
30
40
50
60
R G - Ohms
IXGH 20N120B
IXGT 20N120B
Fig. 8. Dependence of Eoff on IC
14
TJ = 125ºC
12
VGE = 15V
VC E = 960V
10
8
R G= 56 Ohms
6
R G= 5 Ohms
4
2
10
15
20
25
30
35
40
I C - Amperes
Fig. 9. Dependence of Eoff on Temperature
16
So lid lines - RG = 56 Ohms
14 Dashed lines - RG = 5 Ohms
12
VGE = 15V
VC E = 960V
10
I C = 40A
8
I C = 20A
6
4
2
I C = 10A
0
0
25
50
75 100 125 150
TJ - Degrees Centigrade
Fig. 10. Gate Charge
15
VC E = 600V
12
I C = 20A
I G= 10mA
9
6
3
0
0 10 20 30 40 50 60 70 80
Q G - nanoCoulombs
10000
Fig. 11. Capacitance
f = 1M Hz
1000
Ci es
100
10
0
Coes
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 12. Reverse-Bias Safe Operating Area
90
80
70
TJ = 125º C
60
RG = 10 Ohms
dV/dT < 10V/ns
50
40
30
20
10
0
100
300 500 700 900 1100 1300
VCE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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