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IXGK50N60BU1 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGK50N60BU1
IXYS
IXYS CORPORATION IXYS
IXGK50N60BU1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
IXGK50N50BU1 IXGK50N60BU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
25 35
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Remarks: Add capacitance from
IXGH50N60B (DS95585B)
Qg
Q
ge
Qgc
td(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
200
nC
50
nC
70
nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 2.7 W
50
ns
50
ns
110
ns
Remarks: Switching times may increase 50N50 80 150 ns
for VCE (Clamp) > 0.8 • VCES, higher TJ or 50N60 150
increased RG
50N50 1.8
50N60
ns
mJ
3.0 mJ
Inductive
load,
T
J
=
125°C
50
ns
IC = IC90, VGE = 15 V, L = 100 mH
60
ns
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
2.7
W
3
mJ
Remarks: Switching times may increase
200
ns
for VCE (Clamp) > 0.8 • VCES, higher TJ or 50N50 100
ns
increased R
G
50N60 250
50N50 2.6
mJ
50N60 4.2
mJ
0.42 K/W
0.15
K/W
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IC90, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.7 V
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms
19
VR = 360 V
TJ = 125°C 175
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
35
33 A
ns
50 ns
0.75 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-6

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