IXGH20N60 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH20N60 Datasheet PDF : 2 Pages
| |||
IXGH 20N60 IXGM 20N60
IXGH 20N60A IXGM 20N60A
Symbol
gfs
Cies
Coes
C
res
Q
g
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
t
ri
Eon
td(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES, 20N60A
higher TJ or increased RG 20N60A
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V,
L = 300 µH
VCE = 0.8 VCES,
RG = Roff = 82 Ω
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • VCES,
higher TJ or increased RG
20N60
20N60A
20N60
20N60A
6 14
S
1500
pF
200
pF
40
pF
100 120 nC
20 30 nC
60 90 nC
100
ns
200
ns
600
ns
200
ns
1.5
mJ
100
ns
200
ns
2
mJ
900 1500 ns
530 2000 ns
250 600 ns
3.2
mJ
2.0
mJ
0.83 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the
IXGH 20N60U1 and IXGH 20N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
Share Link: 