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IXGA50N60C4 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGA50N60C4
IXYS
IXYS CORPORATION IXYS
IXGA50N60C4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
4.5
4
Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
3.5
VCE = 400V
3
I C = 72A
2.5
2
1.5
1
I C = 36A
0.5
0
10
15
20
25
30
RG - Ohms
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
35
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
3.5
3.5
Eoff
Eon - - - -
3
RG = 10, VGE = 15V
3
VCE = 400V
2.5
2.5
I C = 72A
2
2
1.5
1.5
1
1
I C = 36A
0.5
0.5
0
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
150
360
tfi
td(off) - - - -
130
RG = 10, VGE = 15V
320
VCE = 400V
110
280
90
240
TJ = 25ºC, 125ºC
70
200
50
160
30
120
15
25
35
45
55
65
75
IC - Amperes
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.5
3.5
Eoff
Eon - - - -
3
RG = 10, VGE = 15V
3
VCE = 400V
2.5
2.5
2
TJ = 125ºC, 25ºC
2
1.5
1.5
1
1
0.5
0.5
0
0
15
25
35
45
55
65
75
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
135
550
130
tfi
td(off) - - - -
500
TJ = 125ºC, VGE = 15V
125
VCE = 400V
450
120
400
115
350
I C = 72A
110
300
105
I C = 36A
250
100
200
95
150
90
100
10
15
20
25
30
35
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
130
320
120
tfi
td(on) - - - -
300
RG = 10, VGE = 15V
110
VCE = 400V
280
100
260
90
80
I C = 72A
70
240
I C = 36A 220
200
60
180
50
160
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
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