IXGA50N60C4 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGA50N60C4 Datasheet PDF : 6 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = IC110, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
E
off
Inductive Load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
RthJC
RthCS
TO-247
TO-220
Characteristic Values
Min.
Typ. Max.
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
TO-263 Outline
20
30
S
1900
pF
100
pF
60
pF
113
nC
13
nC
44
nC
40
ns
66
ns
0.95
mJ
270
ns
63
ns
0.84 1.55 mJ
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
30
ns
45
ns
1.10
mJ
210
ns
96
ns
0.90
mJ
0.43 °C/W
0.21
°C/W
0.50
°C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-220 Outline
TO-247 Outline
123
∅P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 = Gate 2 = Collector
3 = EmPiinttse:r 1 - Gate
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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