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IXGH40N60C2 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH40N60C2
IXYS
IXYS CORPORATION IXYS
IXGH40N60C2 Datasheet PDF : 5 Pages
1 2 3 4 5
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 30 A; VCE = 10 V,
Pulse test, t 300 μs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 30 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
(TO-247)
20 36
S
2500
pF
180
pF
54
pF
95
nC
14
nC
36
nC
18
20
90
32
0.20
ns
ns
140 ns
ns
0.37 mJ
18
20
0.3
130
80
0.50
ns
ns
mJ
ns
240 ns
mJ
0.42 K/W
0.25
K/W
IXGH 40N60C2
IXGT 40N60C2
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2

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