DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGM40N60 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGM40N60
IXYS
IXYS CORPORATION IXYS
IXGM40N60 Datasheet PDF : 4 Pages
1 2 3 4
Fig. 1 Saturation Characteristics
80
TJ = 25°C
70
60
50
VGE = 15V
13V
40
11V
9V
30
7V
5V
20
10
0
0
1
2
3
4
5
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
TJ = 25°C
8
7
6
5
4
3
2
IC = 40A
1
IC = 20A
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
80
VCE = 100V
70
60
50
40
30
20
TJ = 25°C
10
TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
VGE - Volts
© 1996 IXYS All rights reserved
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig. 2 Output Characterstics
350
VGE = 15V 13V
300
11V
250
9V
200
TJ = 25°C
150
7V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4
IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGE(th) @ 250µA
1.1
1.0
0.9
BVCES @ 3mA
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]