DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGM40N60 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGM40N60
IXYS
IXYS CORPORATION IXYS
IXGM40N60 Datasheet PDF : 4 Pages
1 2 3 4
Symbol
g
fs
Cies
C
oes
Cres
Qg
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
t
d(off)
tfi
Eoff
R
thJC
RthCK
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I = I ; V = 10 V,
25 35
S
C
C90 CE
Pulse test, t 300 µs, duty cycle 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
4500
pF
300
pF
60
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 22
Switching times may increase
for VCE (Clamp) > 0.8 • VCES, 40N60A
higher TJ or increased RG 40N60A
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 100 µH
VCE = 0.8 VCES,
RG = Roff = 22
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • V , higher
CES
TJ or increased RG
40N60
40N60A
40N60
40N60A
200 250 nC
45 80 nC
88 120 nC
100
ns
200
ns
600
ns
200
ns
3
mJ
100
ns
200
ns
4
mJ
600 1000 ns
600 2000 ns
300 800 ns
12
mJ
6
mJ
0.25
0.5 K/W
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]