IXGN60N60C2D1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGN60N60C2D1 Datasheet PDF : 5 Pages
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IXGN60N60C2
IXGN60N60C2D1
160
A
140
120
IF
100
80
60
TVJ= 150°C
100°C
25°C
40
20
0
0
1
2V
VF
Fig. 13. Forward Current IF Versus VF
2.0
1.5
Kf
1.0
0.5
IRM
QRM
4000
nC
3000
Qr
TVJ= 100°C
VR = 300V
2000
IF= 120A, 60A, 30A
80
TVJ= 100°C
A VR = 300V
60
IRM
IF= 120A, 60A, 30A
40
1000
20
0
100
A/μs 1000
-diF/dt
Fig. 14. Reverse Recorvery Charge Qr
Versus -diF/dt
140
ns
130
trr
120
TVJ= 100°C
VR = 300V
110
IF= 30A, 60A, 120A
100
90
0
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 15. Peak Reverse Current IRM
Versus -diF/dt
20
V
VFR
15
TVJ= 100°C
IF = 60A
trr
VFR
1.6
μs
tfr
1.2
10
0.8
5
0.4
0.0
0
40
80
120 °C 160
TVJ
Fig. 16. Dynamic Paraments Qr, IRM
Versus TvJ
11.000
K/W
0.1
ZthJC
0.100
0.01
80
0
200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 17. Recorvery Time trr Versus
-diF/dt
0
0.0
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 18. Peak Forward Voltage VRM
and trr Versus -diF/dt
0.0001.010
0.0001
0.00001
0.001
0.0001
0.001
0.01
0.1
DSEP 2x61-06A
s
1
t
F0ig.0.02017. Maximum Transie0n.0t 0T1hermal Impeadance 0J.u0e1 ctioPnulstoe CWaidsteh [(fsor] Dio0d.e1)
1
10
Fig. 27. Maximum Transient Thermal Impedance (for diode)
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