IXGN60N60C2D1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGN60N60C2D1 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 50A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 50A, VGE = 15 V
VCE = 400V, RG = 2Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 2Ω
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
40
58
S
4750
pF
530
pF
65
pF
146
nC
28
nC
50
nC
18
ns
25
ns
95 150 ns
35
ns
0.48 0.80 mJ
18
ns
25
ns
0.90
mJ
130
ns
80
ns
1.20
mJ
0.26 °C/W
0.05
°C/W
IXGN60N60C2
IXGN60N60C2D1
SOT-227B miniBLOC
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Oherwise Specified)
Characteristic Values
Min. Typ. Max.
VF
IF = 60A, VGE = 0V, Note 1
2.1 V
TJ = 150°C
1.4
V
IRM
trr
RthJC
IF = 60A, -di/dt = 100A/μs, TJ = 100°C
VR = 100V, VGE = 0V,
IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V
8.3 A
35
ns
0.85 °C/W
Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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