IXGH30N60B2 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH30N60B2 Datasheet PDF : 5 Pages
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IXGH 30N60B2
IXGT 30N60B2
Fig. 7. Transconductance
45
40
TJ = -40ºC
25ºC
35
125ºC
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200 225 250
I C - Amperes
Fig. 8. Dependence of Turn-Off
Ene rgy on RG
2.7
2.4
2.1
1.8
TJ = 125ºC
1.5
VGE = 15V
VCE = 400V
1.2
IC = 48A
0.9
IC = 24A
0.6
0.3
0
0
IC = 12A
10 20 30 40 50 60 70 80
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy on IC
2
1.8
RG = 5Ω
VGE = 15V
1.6
VCE = 400V
1.4
1.2
TJ = 125ºC
1
0.8
0.6
0.4
TJ = 25ºC
0.2
0
10 15 20 25 30 35 40 45 50
I C - Amperes
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
2
1.8
RG = 5Ω
VGE = 15V
1.6
VCE = 400V
1.4
IC = 48A
1.2
1
IC = 24A
0.8
0.6
0.4
0.2
IC = 12A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
700
600
500
td(off)
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 400V
400
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
260
240
220
200
180
TJ = 125ºC
160
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
VCE = 400V
300
IC = 12A
IC = 24A
200
IC = 48A
140
120
100
TJ = 25ºC
80
100
0 10 20 30 40 50 60 70 80
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
60
10 15 20 25 30 35 40 45 50
I C - Amperes
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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