IXGH30N60 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH30N60 Datasheet PDF : 2 Pages
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IXGH 30N60 IXGM 30N60
IXGH 30N60A IXGM 30N60A
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
8 16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
2800
pF
230
pF
70
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES, 30N60A
higher TJ or increased RG 30N60A
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 300 µH
VCE = 0.8 VCES,
RG = Roff = 33 Ω
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • V , higher
CES
TJ or increased RG
30N60
30N60A
30N60
30N60A
150 180 nC
35 50 nC
60 90 nC
100
ns
200
ns
500
ns
200
ns
2
mJ
100
ns
200
ns
3
mJ
600 1000 ns
500 1500 ns
250 800 ns
5.5
mJ
4.0
mJ
0.62 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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