IXGH25N160 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH25N160 Datasheet PDF : 5 Pages
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High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
IXGH 25N160
IXGT 25N160
VCES = 1600 V
IC25 = 75 A
VCE(sat)= 2.5 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1600
V
1600
V
VGES
VGEM
Continuous
Transient
± 20
V
± 30
V
IC25
TC = 25°C
IC110
TC = 110°C
ICM
TC = 25°C, VGE = 20 V, 1 ms
75
A
25
A
200
A
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 20 Ω
Clamped inductive load
ICM = 100
A
@ 0.8 VCES
PC
TC = 25°C
300
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
Md
Weight
Mounting torque (TO-247)
TO-247
TO-268
1.13/10 Nm/lb-in
6
g
4
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±30 V
IC = IC110, VGE = 15 V
IC = 100 A, VGE = 20 V
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
1600
3.0
TJ = 125°C
V
5.0 V
50 μA
1 mA
±100 nA
2.5 V
4.7 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
International standard packages
- JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99381(12/05)
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