IXGH32N60B Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXGH32N60B Datasheet PDF : 5 Pages
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HiPerFASTTM IGBT
IXGH 32N60B
IXGT 32N60B
IXGH 32N60BD1
IXGT 32N60BD1
VCES
I
C25
VCE(sat)
tfi(typ)
= 600 V
= 60 A
= 2.3 V
= 85 ns
(D1)
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load
PC
TC = 25°C
T
J
TJM
T
stg
Md
Mounting torque (M3) TO-247AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247AD
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
32
A
120
A
ICM = 64
A
@ 0.8 VCES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
4
g
Symbol
BVCES
V
GE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
600
2.5
32N60B
32N60BD1
V
5.0 V
200 µA
1 mA
3 mA
±100 nA
2.3 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C
(TAB)
G
CE
C
(TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
• Internationalstandardpackages
• High frequency IGBT and antiparallel
FRED in one package
• Highcurrenthandlingcapability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
-drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitableforsurfacemounting
• Very low switching losses for high
frequency applications
• Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
© 2003 IXYS All rights reserved
DS98749C(02/03)
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