IXGH32N60B(2000) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH32N60B Datasheet PDF : 2 Pages
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IXGH32N60B
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
15 20
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
2500
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
230
pF
Cres
70
pF
Qg
Qge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
125 150 nC
23 35 nC
50 75 nC
25
ns
30
ns
100 200 ns
80 150 ns
0.8 1.6 mJ
td(on)
tri
E
on
td(off)
t
fi
Eoff
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
25
ns
35
ns
0.3
mJ
120
ns
120
ns
1.4
mJ
R
thJC
RthCK
0.62 K/W
0.25
K/W
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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