IXGH16N170A Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH16N170A Datasheet PDF : 6 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
7 13
S
1620
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
16N170A
83
pF
16N170AH1 110
pF
31
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
83
nC
10
nC
31
nC
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V, RG = 10 Ω
VCE = 0.5 VCES ,Note 3
36
57
160
70
0.85
ns
ns
300 ns
150 ns
1.5 mJ
Inductive load, TJ = 125°C
38
ns
IC = IC25, VGE = 15 V, RG = 10 Ω
59
ns
VCE = 0.5 VCES ,Note 3
16N170A
1.5
mJ
16N170AH1 2.5
mJ
175
ns
155
ns
2.0
mJ
(TO-247)
0.65 K/W
0.25
K/W
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Reverse Diode (FRED)
Characteristic Values
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
min. typ. max.
VF
IF = 20A, VGE = 0 V, Note 2
2.5 2.9 V
TJ = 125°C
2.5
V
trr
IF = 20A, VGE = 0 V, -diF/dt = 450 A/μs
230
ns
VR = 1200 V
TJ = 125°C
400
ns
IRM
23
A
TJ = 125°C
27
A
RthJC
0.9 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3
0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
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