IXFN38N100Q2 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN38N100Q2 Datasheet PDF : 4 Pages
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IXFN38N100Q2
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG(on)
QGS
QGD
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20V, ID = 0.5 • ID25 Note 1
VGS = 0 V, VDS = 25V, f = 1MHz
24
40
S
13.5
nF
1035
pF
180
pF
Resistive Switching Time
25
ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
28
ns
RG = 1Ω (External)
57
ns
15
ns
250
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
60
nC
105
nC
0.14 °C/W
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
38 A
152 A
VSD
IF = IS, VGS = 0V, Note 1
1.5 V
trr
IF = 25A
QRM
-di/dt = 100 A/μs
VR = 100V
IRM
300 ns
1.4
μC
9
A
miniBLOC, SOT-227 B Outline
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
by one or more of the following U.S. patents:
4,850,072 5,017,508 5,063,307 5,381,025
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
6,404,065 B1 6,683,344
6,259,123 B1 6,534,343
6,583,505
6,710,463
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B26,759,692 7,063,975 B2
6,771,478 B27,071,537
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